? ? ? ? guilin strong micro-electronics co.,ltd. gm901 2( ? s9012) features c pnp low frequency amplifier transistor maximum ratings ~? (t a =25 ) characteristic ? symbol ? rating ~? unit collector-base voltage ?O - O? v cbo - 40 vdc -collector-emitter voltage ?O - lO? v ceo - 30 vdc emitter-base voltage lO - O? v ebo - 5.0 vdc collector current-continuous ?O - Bm ic - 500 madc base-current O i b - 50 madc collector power dissipation ?O? p c 300 mw junction temperature Y t j 150 storage temperature range ? t stg -55 ? 150 device marking gm901 2( ? s9012) = 2t1
? ? ? ? guilin strong micro-electronics co.,ltd. gm901 2( ? s9012) electrical characrteristics (t a =25 unless o t herwise noted of?? 25 ) characteristic ? symbo l ? test condition y?l min ? typ ? max ? unit collector cutoff current ?O? i cbo v cb = - 35v,i e =0 - 0.1 a emitter cutoff current lO? i ebo v eb = - 5v,i c =0 - 0.1 a collect-base breakdown voltage ?O - O? v (br)cbo i c = - 100 a - 40 v collect-base breakdown voltage ?O - O? v (br)ceo i c = - 1.0ma - 30 v emitter-base breakdown voltage lO - O? v (br)ebo i e = - 100 a - 5 v dc current gain ? h fe (1) v ce = - 1v, i c = - 5 0ma 70 400 h fe (2) v ce = - 6v, i c = - 400ma 25 collector-emitter saturation voltage ?O - lO?? v ce(sat) i c = - 500ma, i b = - 50ma - 0.6 v base -emitter saturation voltage O - lO?? v b e(sat) i c = - 500ma, i b = - 50ma - 1.2 v base-emitter voltage O - lO? v be v ce = - 1v, i c = - 100ma - 0.8 - 1.0 v transition frequency l f t v ce = - 6v, i c = - 20ma 150 300 mhz collector output capacitance ? c ob v cb = - 6v,i e =0, f=1mhz 7.0 10 pf
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